DocumentCode
1758730
Title
What Lies Ahead for Resistance-Based Memory Technologies?
Author
Yoon-Jong Song ; Gitae Jeong ; In-Gyu Baek ; Jungdal Choi
Volume
46
Issue
8
fYear
2013
fDate
41487
Firstpage
30
Lastpage
36
Abstract
Phase-change RAM, magnetic RAM, and resistive RAM offer strong scalability, speed, and power consumption advantages over conventional capacitance-based memory. Recent work shows the feasibility of mass producing these new devices and their suitability for next-generation technology.
Keywords
MRAM devices; integrated circuit reliability; phase change memories; capacitance-based memory; magnetic RAM; next-generation technology; phase-change RAM; power consumption; resistance-based memory technologies; resistive RAM; Electrodes; Magnetic resonance imaging; Magnetic tunneling; Phase change random access memory; Power distribution; Random access memory; MRAM; PRAM; ReRAM; resistance-based memory devices;
fLanguage
English
Journal_Title
Computer
Publisher
ieee
ISSN
0018-9162
Type
jour
DOI
10.1109/MC.2013.221
Filename
6527245
Link To Document