DocumentCode
1758839
Title
Correction to “Separation of Ionization Traps in NPN Transistors Irradiated by Lower Energy Electrons” [Oct 13 3924-3931]
Author
Li, Xin ; Liu, Cong ; Yang, Jian ; Zhao, Yiwen ; Liu, Guo-Ping
Author_Institution
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, China
Volume
61
Issue
1
fYear
2014
fDate
Feb. 2014
Firstpage
708
Lastpage
708
Abstract
In the above-named article [ibid., vol. 60, no. 5, pp. 3924-3931, Oct. 2013], Fig. 11 and Fig. 12 were identical. The correct Fig. 11 is provided here.
Keywords
Annealing; Bipolar transistors; Electron traps; Interface states; Ionizing radiation;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2014.2301941
Filename
6733429
Link To Document