Title :
A 67 GHz GaN Voltage-Controlled Oscillator MMIC With High Output Power
Author :
Weber, R. ; Schwantuschke, Dirk ; Bruckner, P. ; Quay, Ruediger ; Mikulla, Michael ; Ambacher, Oliver ; Kallfass, I.
Author_Institution :
Fraunhofer-Inst. of Appl. Solid-State Phys. (IAF), Freiburg, Germany
Abstract :
This letter describes the design and the realization of a fixed-frequency oscillator and voltage-controlled oscillator (VCO) MMIC realized in an AlGaN/GaN HEMT technology with 100 nm gate length. Both oscillators achieve output power levels of almost 20 dBm without post-amplification. The oscillation frequency of the fixed-frequency oscillator is 65.6 GHz, while the VCO can be tuned from 65.6 to 68.8 GHz, which leads to a relative bandwidth of 5%. The phase noise of the VCO is -83 dBc/Hz at 1 MHz frequency offset.
Keywords :
III-V semiconductors; MMIC oscillators; aluminium compounds; gallium compounds; millimetre wave oscillators; voltage-controlled oscillators; wide band gap semiconductors; AlGaN-GaN; HEMT technology; MMIC VCO; MMIC voltage-controlled oscillator; fixed-frequency oscillator; frequency 65.6 GHz to 68.8 GHz; high output power; phase noise; Gallium Nitride (GaN); V-band (50–75 GHz); high electron mobility transistor (HEMT); monolithically microwave integrated circuit (MMIC); voltage-controlled oscillator (VCO);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2013.2265875
