A 67 GHz GaN Voltage-Controlled Oscillator MMIC With High Output Power

Author

Weber, R. ; Schwantuschke, Dirk ; Bruckner, P. ; Quay, Ruediger ; Mikulla, Michael ; Ambacher, Oliver ; Kallfass, I.

Author_Institution

Fraunhofer-Inst. of Appl. Solid-State Phys. (IAF), Freiburg, Germany

Volume

23

Issue

7

fYear

2013

fDate

41456

Firstpage

374

Lastpage

376

Abstract

This letter describes the design and the realization of a fixed-frequency oscillator and voltage-controlled oscillator (VCO) MMIC realized in an AlGaN/GaN HEMT technology with 100 nm gate length. Both oscillators achieve output power levels of almost 20 dBm without post-amplification. The oscillation frequency of the fixed-frequency oscillator is 65.6 GHz, while the VCO can be tuned from 65.6 to 68.8 GHz, which leads to a relative bandwidth of 5%. The phase noise of the VCO is -83 dBc/Hz at 1 MHz frequency offset.

Keywords

III-V semiconductors; MMIC oscillators; aluminium compounds; gallium compounds; millimetre wave oscillators; voltage-controlled oscillators; wide band gap semiconductors; AlGaN-GaN; HEMT technology; MMIC VCO; MMIC voltage-controlled oscillator; fixed-frequency oscillator; frequency 65.6 GHz to 68.8 GHz; high output power; phase noise; Gallium Nitride (GaN); V-band (50–75 GHz); high electron mobility transistor (HEMT); monolithically microwave integrated circuit (MMIC); voltage-controlled oscillator (VCO);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2013.2265875

Filename

6527278