Title :
Enhanced electrical and optoelectrical properties of cadmium selenide nanobelts by chlorine doping
Author :
Zhang, Leiqi ; Yu, Haoyong ; Cao, Wanli ; Zou, Changyue ; Dong, Yongsheng ; Zhu, Da-Ming ; Huang, Shanjin
Author_Institution :
Shanghai Inst. of Tech. Phys., Shanghai, China
Abstract :
Single-crystalline chlorine-doped cadmium selenide (CdSe) nanobelts (NBs) with a wurtzite structure were synthesised by using CdSe and InCl3 powder as sources via a co-evaporation approach. The investigation of the performance of the field-effect transistors fabricated from Cl-doped NBs shows n-type conduction behaviour and enhanced conductivity (1-70 S/cm). Furthermore, it is found that the photoconductivity (illuminated by a white light with a power density of 1.3 mW/cm2) increases with the enhancement of the conductivity. Photoconductive analysis reveals that the Cl-doped NBs show excellent photoresponse properties, with responsivity of 8.87 × 105 AW-1 and a corresponding external quantum efficiency of 1.74 × 106 when illuminated under a 650 nm light and biased 1 V. In addition, the electrical properties of the Cl-doped NBs can be influenced by changing the ambiance, which is caused by their surface states.
Keywords :
II-VI semiconductors; cadmium compounds; electrical conductivity; field effect transistors; nanofabrication; nanostructured materials; photoconductivity; semiconductor doping; surface states; vacuum deposition; CdSe:Cl; enhanced electrical properties; held-effect transistors; n-type conduction behaviour; optoelectrical properties; photoconductivity; photoresponse properties; power density; quantum efhciency; single-crystalline chlorine-doped cadmium selenide nanobelts; surface states;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl.2013.0611