DocumentCode :
1759168
Title :
Optical and Electrical Simulation of μc-Si:H Solar Cells: Effect of Substrate Morphology and Crystalline Fraction
Author :
Do Yun Kim ; van Swaaij, Rene A. C. M. M. ; Zeman, M.
Author_Institution :
Photovoltaic Mater. & Devices Lab., Delft Univ. of Technol., Delft, Netherlands
Volume :
4
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
22
Lastpage :
27
Abstract :
Hydrogenated microcrystalline silicon (μc-Si:H) is an important material for high-efficiency multijunction solar cells. Due to its complex microstructural properties, it is difficult to describe the electronic behavior clearly. In this study, we measure opto-electronic properties including the mobility gap of μc-Si:H films in solar cells, as well as physical properties such as the crystalline fraction profile. The height distribution function of the ZnO substrates is obtained by AFM scans, which is used for optical simulation. All the parameters that we obtained from measurements were used as input parameters of a model in the ASA simulator. We obtained a good fit between measurements and simulations.
Keywords :
atomic force microscopy; carrier mobility; crystal microstructure; elemental semiconductors; hydrogen; silicon; solar cells; surface morphology; μc-Si:H solar cells; AFM; ASA simulator; Si:H; ZnO substrates; complex microstructural properties; crystalline fraction; crystalline fraction profile; electrical simulation; height distribution function; high-efficiency multijunction solar cells; hydrogenated microcrystalline silicon; mobility gap; optical simulation; opto-electronic properties; physical properties; substrate morphology; Morphology; PIN photodiodes; Photovoltaic cells; Substrates; Temperature measurement; Zinc oxide; Microcrystalline silicon; TCO morphology; mobility gap; optical and electrical simulation; solar cells;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2013.2287770
Filename :
6664990
Link To Document :
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