DocumentCode :
1759186
Title :
Silicon Thin-Film Solar Cells on Glass With Open-Circuit Voltages Above 620 mV Formed by Liquid-Phase Crystallization
Author :
Amkreutz, Daniel ; Haschke, Jan ; Kuhnapfel, Sven ; Sonntag, Paul ; Rech, Bernd
Author_Institution :
Inst. for Silicon-Photovoltaics, Helmholtz-Zentrum Berlin fur Mater. und Energie GmbH, Berlin, Germany
Volume :
4
Issue :
6
fYear :
2014
fDate :
Nov. 2014
Firstpage :
1496
Lastpage :
1501
Abstract :
Liquid-phase crystallization (LPC) using line-shaped energy sources such as laser or electron beam has proven to be a suitable method to grow large grained high-quality silicon films onto commercially well-available glass substrates. In this study, we compare cw-diode laser-crystallized absorbers with electron beam-crystallized material using back contacted back junction solar cells. Furthermore, the influence of the absorber doping concentration thickness on the solar cell performance is studied. Using experimental data obtained on test structures, as well as solar cells and 1-D device simulations, an ideal dopant concentration is determinedtobe 2 - 6 × 1016cm-3, in combination with an absorber thickness of 10-20 μm. Finally, we present a slightly modified cell process to reduce the optical losses, which resulted in conversion efficiencies of up to 11.8%.
Keywords :
crystallisation; doping profiles; elemental semiconductors; liquid-liquid transformations; optical losses; semiconductor thin films; silicon; solar cells; thin film devices; 1D device simulation; absorber doping concentration thickness; backcontacted backjunction solar cells; cw-diode laser-crystallized absorbers; electron beam; electron beam-crystallized material; glass substrates; large grained high-quality silicon films; laser beam; line-shaped energy sources; liquid-phase crystallization; open-circuit voltages; optical losses; silicon thin-film solar cells; size 10 mum to 20 mum; solar cell performance; test structures; Crystallization; Doping; Passivation; Photovoltaic cells; Semiconductor process modeling; Silicon; Thin film devices; Liquid-phase crystallization; polycrystalline silicon; single-sided contact system; surface passivation;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2014.2358799
Filename :
6915680
Link To Document :
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