Low-Temperature Quantum Transport Characteristics in Single n-Channel Junctionless Nanowire Transistors

Author

Xiaoming Li ; Weihua Han ; Liuhong Ma ; Hao Wang ; Yanbo Zhang ; Fuhua Yang

Author_Institution

Eng. Res. Center for Semicond. Integration Technol., Inst. of Semicond., Beijing, China

Volume

34

Issue

5

fYear

2013

fDate

41395

Firstpage

581

Lastpage

583

Abstract

A single n-channel junctionless nanowire transistor is fabricated and characterized for low-temperature quantum transport behavior. Transfer characteristics exhibit current oscillations below flat-band voltage (V_FB) up to temperature 75 K, possibly due to cotunneling through unintentional quantum dots. Furthermore, regular current steps are observed above V_FB, that is, each current plateau corresponds to a fully populated subband. Experimental result of transconductance peaks indicates that the subband energy spacing in the 1-D channel agrees well with theoretical prediction.

Keywords

nanowires; transistors; 1D channel; cotunneling; flat band voltage; low temperature quantum transport behavior; low temperature quantum transport characteristics; oscillations; single n-channel junctionless nanowire transistors; subband energy spacing; transconductance peaks; transfer characteristics; unintentional quantum dots; Logic gates; Oscillators; Quantum dots; Silicon; Temperature; Transconductance; Transistors; Current oscillation; current step; junctionless nanowire transistor; low temperature; quantum-confinement effect;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2250898

Filename

6480784