Title :
Low-Temperature Quantum Transport Characteristics in Single n-Channel Junctionless Nanowire Transistors
Author :
Xiaoming Li ; Weihua Han ; Liuhong Ma ; Hao Wang ; Yanbo Zhang ; Fuhua Yang
Author_Institution :
Eng. Res. Center for Semicond. Integration Technol., Inst. of Semicond., Beijing, China
Abstract :
A single n-channel junctionless nanowire transistor is fabricated and characterized for low-temperature quantum transport behavior. Transfer characteristics exhibit current oscillations below flat-band voltage (VFB) up to temperature 75 K, possibly due to cotunneling through unintentional quantum dots. Furthermore, regular current steps are observed above VFB, that is, each current plateau corresponds to a fully populated subband. Experimental result of transconductance peaks indicates that the subband energy spacing in the 1-D channel agrees well with theoretical prediction.
Keywords :
nanowires; transistors; 1D channel; cotunneling; flat band voltage; low temperature quantum transport behavior; low temperature quantum transport characteristics; oscillations; single n-channel junctionless nanowire transistors; subband energy spacing; transconductance peaks; transfer characteristics; unintentional quantum dots; Logic gates; Oscillators; Quantum dots; Silicon; Temperature; Transconductance; Transistors; Current oscillation; current step; junctionless nanowire transistor; low temperature; quantum-confinement effect;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2250898
