Compressive Stressed P-Channel Polycrystalline-Silicon Thin-Film Transistors for High Field-Effect Mobility

Author

Jae Hyo Park ; Ki Hwan Seok ; Hyung Yoon Kim ; Sol Kyu Lee ; Hee Jae Chae ; Yong Hee Lee ; Jae Ho Lee ; Kiaee, Zohreh ; Donghwan Ahn ; Seung Ki Joo

Author_Institution

Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., Seoul, South Korea

Volume

36

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

793

Lastpage

795

Abstract

A compressively stressed polycrystalline-silicon (poly-Si) thin-film transistor (TFT) was successfully demonstrated on a tensile stressed glass substrate. The layer of a-Si:H/bare glass was annealed for 45 h with a sharp annealing and a slow cooled condition in order to form compressive strain on the a-Si:H film. Then, the a-Si:H was crystallized by NiSi₂ seed-induced lateral crystallization having (110) preferred texture, and the top-gated TFT was fabricated. The electrical properties were excellent comparing with the strain-free poly-Si TFT, and especially the field-effect mobility increased 9.3 times higher.

Keywords

annealing; crystallisation; elemental semiconductors; high field effects; nickel compounds; silicon; tensile strength; thin film transistors; NiSi₂; Si; a-Si:H/bare glass; compressive stress; electrical property; glass substrate; high field-effect mobility; p-channel polycrystalline-silicon TFT; seed-induced lateral crystallization; sharp annealing; tensile stress; thin-film transistors; time 45 h; Crystallization; Films; Glass; Silicon; Strain; Substrates; Thin film transistors; Strain silicon; compressive stress; polycrystalline-silicon thin-film transistor (poly-Si TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2443153

Filename

7120920