Title :
Compressive Stressed P-Channel Polycrystalline-Silicon Thin-Film Transistors for High Field-Effect Mobility
Author :
Jae Hyo Park ; Ki Hwan Seok ; Hyung Yoon Kim ; Sol Kyu Lee ; Hee Jae Chae ; Yong Hee Lee ; Jae Ho Lee ; Kiaee, Zohreh ; Donghwan Ahn ; Seung Ki Joo
Author_Institution :
Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., Seoul, South Korea
Abstract :
A compressively stressed polycrystalline-silicon (poly-Si) thin-film transistor (TFT) was successfully demonstrated on a tensile stressed glass substrate. The layer of a-Si:H/bare glass was annealed for 45 h with a sharp annealing and a slow cooled condition in order to form compressive strain on the a-Si:H film. Then, the a-Si:H was crystallized by NiSi2 seed-induced lateral crystallization having (110) preferred texture, and the top-gated TFT was fabricated. The electrical properties were excellent comparing with the strain-free poly-Si TFT, and especially the field-effect mobility increased 9.3 times higher.
Keywords :
annealing; crystallisation; elemental semiconductors; high field effects; nickel compounds; silicon; tensile strength; thin film transistors; NiSi2; Si; a-Si:H/bare glass; compressive stress; electrical property; glass substrate; high field-effect mobility; p-channel polycrystalline-silicon TFT; seed-induced lateral crystallization; sharp annealing; tensile stress; thin-film transistors; time 45 h; Crystallization; Films; Glass; Silicon; Strain; Substrates; Thin film transistors; Strain silicon; compressive stress; polycrystalline-silicon thin-film transistor (poly-Si TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2443153
