Title :
Radiation Resistance of Er-Doped Silica Fibers: Effect of Host Glass Composition
Author :
Likhachev, M.E. ; Bubnov, M.M. ; Zotov, K.V. ; Tomashuk, Alexander ; Lipatov, Denis S. ; Yashkov, Mikhail V. ; Guryanov, Alexey
Author_Institution :
Fiber Opt. Res. Center, Moscow, Russia
Abstract :
With the aim to find the best-suited host glass for radiation-resistant erbium-doped fibers (EDF), radiation-induced absorption (RIA) is measured and analyzed after γ -irradiation to 3.0-4.5 kGy in 18 silica optical fibers with various concentrations of dopants: Al2O3 , P2O5 , GeO2 and Er2O3 . The RIA dependence on the content of Al2O3, P2O5 and Er2O3 in singly doped fibers is investigated. RIA of fibers codoped simultaneously with Al2O3 and P2O5 are found to be significantly lower than those of singly Al2O3 -doped fibers. This is explained as the result of the formation of AlPO4-joins in the silica network. GeO2 codoping of AlPO4 -doped silica is shown to further reduce RIA. Nevertheless, the application of H2 -loading and photobleaching of RIA by 980-nm laser radiation shows that the AlPO4 - and GeO2 -codoped silica is outperformed by P-free Al2O3- and GeO2-codoped silica, which is, therefore, concluded to be the best host glass composition for radiation resistant EDFs.
Keywords :
aluminium compounds; erbium; erbium compounds; gamma-ray effects; germanium compounds; glass fibres; optical fibre testing; optical glass; optical saturable absorption; phosphorus compounds; silicon compounds; γ -irradiation; H2; SiO2:Al2O3; SiO2:AlPO4; SiO2:Er; SiO2:Er2O3; SiO2:GeO2; SiO2:P2O5; erbium doped silica fibers; host glass composition; photobleaching; radiation induced absorption; radiation resistance; wavelength 980 nm; Aluminum oxide; Atomic measurements; Glass; Optical fiber networks; Optical fibers; Radiation effects; Silicon compounds; Erbium-doped fibers (EDF); optical fiber radiation effects; radiation resistance; radiation-induced absorption (RIA); space applications;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2012.2233196