DocumentCode :
1759365
Title :
Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors
Author :
Pelamatti, Alice ; Goiffon, Vincent ; Estribeau, Magali ; Cervantes, Paola ; Magnan, Pierre
Author_Institution :
ISAE, Univ. de Toulouse, Toulouse, France
Volume :
34
Issue :
7
fYear :
2013
fDate :
41456
Firstpage :
900
Lastpage :
902
Abstract :
This letter presents a simple analytical model for the evaluation of the full well capacity (FWC) of pinned photodiode (PPD) CMOS image sensors depending on the operating conditions and on the pixel parameters. While in the literature and technical documentations FWC values are generally presented as fixed values independent of the operating conditions, this letter demonstrates that the PPD charge handling capability is strongly dependent on the photon flux.
Keywords :
CMOS image sensors; photodiodes; charge handling capability; full well capacity; operating condition; photon flux; pinned photodiode CMOS image sensors; pixel parameter; Active pixel sensor (APS); CMOS Image Sensors (CIS); charge transfer; full well capacity; pinned photodiode (PPD); pinning voltage; semiconductor device modeling;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2260523
Filename :
6527329
Link To Document :
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