Dielectric Stacking Effect of $\\hbox {Al}_{2} \\hbox {O}_{3}$ and $\\hbox {HfO}_{2}$ in Metal&#x

Author

Park, In-Sung ; Ryu, Kyoung-min ; Jeong, Jaehack ; Ahn, Jinho

Author_Institution

Dept. of Mater. Sci. & Eng., Hanyang Univ., Seoul, South Korea

Volume

34

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

120

Lastpage

122

Abstract

The dielectric stacking effects of Al₂O₃ and HfO₂ thin layers in metal-insulator-metal capacitors are investigated for their leakage current, breakdown voltage, and voltage linearity of the dielectrics. The stacked dielectrics over three layers show the enhancement of dielectric permittivity and voltage linearity of quadratic voltage coefficient compared to one-layer dielectrics. Stacking over five layers attributes to improving leakage current density and breakdown voltage characteristics than three layers.

Keywords

MIM devices; alumina; capacitors; current density; hafnium compounds; high-k dielectric thin films; leakage currents; permittivity; Al₂O₃; HfO₂; breakdown voltage characteristics; dielectric permittivity; dielectric stacking effect; leakage current density; metal-insulator-metal capacitor; one-layer dielectrics; quadratic voltage coefficient; thin layers; voltage linearity; Aluminum oxide; Capacitance; Capacitors; Hafnium compounds; Leakage current; MIM capacitors; Aluminum oxide; dielectric stacking; hafnium oxide; high-$kappa$ dielectrics; metal–insulator–metal (MIM) capacitor;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2228162

Filename

6384661

Dielectric Stacking Effect of and in Metal&#x

Park, In-Sung ; Ryu, Kyoung-min ; Jeong, Jaehack ; Ahn, Jinho

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Dielectric Stacking Effect of $\\hbox {Al}_{2} \\hbox {O}_{3}$ and $\\hbox {HfO}_{2}$ in Metal&#x