Novel Bipolar-Enhanced Tunneling FET With Simulated High On-Current

We propose and simulate a new device combining a tunneling field-effect transistor (TFET) with a heterojunction bipolar transistor (HBT). The carriers generated in the tunneling junction are used as base current to drive the HBT and obtain a high bipolar current. Owing to the sharp switching of the TFET and high HBT current gain, the CMOS-compatible Si/Si_1-xGe_x device shows a subthreshold swing of <; 60 mV/ dec over seven decades of current, a high ON current, and scaling capability down to 10 nm.