Title :
Noise Properties of ZnO Nanowalls Deposited Using Rapid Thermal Evaporation Technology
Author :
Chen, T.P. ; Hung, F.Y. ; Chang, S.P. ; Chang, S.J. ; Wu, San Lein ; Hu, Z.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
ZnO nanowalls are rapidly grown on a glass substrate using a low-temperature thermal evaporation method, without the use of a catalyst and the pre-deposition of a ZnO seed layer on the substrate. Most of the ZnO nanowalls are grown vertically and are about 70-200-nm thick and 2-μm long. The room-temperature photoluminescence spectra show a strong intrinsic ultraviolet (UV) emission and a weak defect-related orange emission. The ZnO nanowall UV sensor is highly sensitive to UV light, with an excellent UV-to-visible ratio and good flicker noise characteristics. This shows the strong potential of ZnO nanowalls for use in UV sensors. At an applied bias of 2 V, the noise equivalent power and the normalized detectivity of the ZnO nanowall UV sensor are 1.87 × 10-10 W and 3.38 × 109 cm·Hz0.5·W-1, respectively.
Keywords :
II-VI semiconductors; evaporation; flicker noise; nanosensors; nanostructured materials; optical sensors; photoluminescence; semiconductor device noise; semiconductor growth; surface morphology; ultraviolet detectors; ultraviolet spectra; vacuum deposition; wide band gap semiconductors; zinc compounds; UV sensor; UV-to-visible ratio; ZnO; flicker noise; glass substrate; low-temperature thermal evaporation; nanowalls; noise equivalent power; photoluminescence spectra; rapid thermal evaporation; size 70 nm to 200 nm; surface morphology; temperature 293 K to 298 K; ultraviolet emission; voltage 2 V; weak defect-related orange emission; 1f noise; Dark current; Nanostructures; Optical sensors; Substrates; Zinc oxide; Flicker noise; ZnO; low temperature; nanowalls; ultraviolet (UV);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2233731