DocumentCode :
1759550
Title :
Imaging Techniques for Quantitative Silicon Material and Solar Cell Analysis
Author :
Michl, Bernhard ; Padilla, Milan ; Geisemeyer, Ino ; Haag, Stephen T. ; Schindler, Fred ; Schubert, Martin C. ; Warta, Wilhelm
Author_Institution :
Fraunhofer Inst. for Solare Energy Syst., Freiburg, Germany
Volume :
4
Issue :
6
fYear :
2014
fDate :
Nov. 2014
Firstpage :
1502
Lastpage :
1510
Abstract :
We present an overview of imaging techniques for analyzing different loss mechanisms in solar cells. The bulk and surface recombination, optical, series resistance, and shunt losses are investigated in more detail. It is shown that a detailed spatially resolved analysis of these loss channels is possible by combining different evaluation methods. Photoluminescence imaging is used to analyze carrier recombination in the material volume and the surfaces. Bulk recombination is investigated on wafer level by an analysis, which is able to investigate the impact of bulk lifetime and impurity concentration on cell efficiency. Variations in the production conditions of multicrystalline silicon serve as an example. Surface recombination is investigated on a cell precursor level, and the importance of detecting surface defects in cell processes featuring dielectric rear-side passivation is highlighted. For analyzing optical, series resistance, and shunt losses on final cells, a combination of photoluminescence imaging, dark lock-in thermography, and spectrally resolved light-beam-induced current is proposed. As an example, a detailed analysis of two solar cells is presented, allowing the assessment of the local and global impact of each loss mechanism on cell efficiency.
Keywords :
electric resistance; elemental semiconductors; infrared imaging; optical losses; passivation; photoluminescence; silicon; solar cells; surface recombination; Si; bulk lifetime; bulk recombination; carrier recombination; cell efficiency; cell precursor level; dark lock-in thermography; dielectric rear-side passivation; imaging techniques; impurity concentration; loss channels; loss mechanisms; material volume; multicrystalline silicon; optical loss; photoluminescence imaging; production conditions; quantitative silicon material; series resistance loss; shunt loss; solar cell analysis; spatially resolved analysis; spectrally resolved light-beam-induced current; surface defects; surface recombination; wafer level; Imaging; Luminescence; Optical losses; Photovoltaic cells; Silicon; Characterization; imaging; loss-analysis; luminescence; silicon; spectrally resolved light-beam-induced current (SR-LBIC); thermography;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2014.2358795
Filename :
6915716
Link To Document :
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