DocumentCode :
1759558
Title :
Computationally Efficient, Real-Time, and Embeddable Prognostic Techniques for Power Electronics
Author :
Alghassi, Alireza ; Perinpanayagam, Suresh ; Samie, Mohammad ; Sreenuch, Tarapong
Author_Institution :
Sch. of Appl. Sci., Integrated Vehicle Health Manage. Centre, Cranfield Univ., Cranfield, UK
Volume :
30
Issue :
5
fYear :
2015
fDate :
42125
Firstpage :
2623
Lastpage :
2634
Abstract :
Power electronics are increasingly important in new generation vehicles as critical safety mechanical subsystems are being replaced with more electronic components. Hence, it is vital that the health of these power electronic components is monitored for safety and reliability on a platform. The aim of this paper is to develop a prognostic approach for predicting the remaining useful life of power electronic components. The developed algorithms must also be embeddable and computationally efficient to support on-board real-time decision making. Current state-of-the-art prognostic algorithms, notably those based on Markov models, are computationally intensive and not applicable to real-time embedded applications. In this paper, an isolated-gate bipolar transistor (IGBT) is used as a case study for prognostic development. The proposed approach is developed by analyzing failure mechanisms and statistics of IGBT degradation data obtained from an accelerated aging experiment. The approach explores various probability distributions for modeling discrete degradation profiles of the IGBT component. This allows the stochastic degradation model to be efficiently simulated, in this particular example ~1000 times more efficiently than Markov approaches.
Keywords :
Markov processes; ageing; decision making; electric vehicles; failure analysis; insulated gate bipolar transistors; power electronics; power system reliability; remaining life assessment; statistical distributions; stochastic processes; IGBT degradation data statistics; Markov model; accelerated aging experiment; electric vehicle; embeddable prognostic technique; failure mechanism analysis; new generation vehicle; on-board real-time decision making; power electronic component monitoring; probability distribution; remaining useful life prediction; stochastic degradation model; Aging; Degradation; Insulated gate bipolar transistors; Stress; Temperature sensors; Wires; IGBT; Isolated-gate bipolar transistor (IGBT); Monte-Carlo Simulation; Monte-Carlo simulation (MCS); Power Electronics; Prognostics; Remaining Useful Life; power electronics; prognostics; remaining useful life (RUL);
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2014.2360662
Filename :
6915717
Link To Document :
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