Title :
Testing 3-D IC Through-Silicon-Vias (TSVs) by Direct Probing
Author :
Kandalaft, Nabeeh ; Rashidzadeh, R. ; Ahmadi, Mahdi
Author_Institution :
Electr. Eng. Dept., Univ. of Windsor, Windsor, ON, Canada
Abstract :
Testing the integrity of interconnects realized by through silicon vias (TSVs) in 3-D integrated circuits (3-D IC) is considered a challenging task. TSVs are excessively small and fragile for current probe technology. In this paper, a new spring-type probe using microelectromechanical systems (MEMS) technology is presented. The implemented MEMS probe supports the required pitch for TSV direct probing and minimizes the undesired scrub marks on TSV surface. Simulation results indicate that the implemented MEMS probe can operate at the gigahertz frequency range without significant test signal degradation.
Keywords :
integrated circuit interconnections; integrated circuit testing; micromechanical devices; probes; three-dimensional integrated circuits; 3D IC TSV testing; 3D IC through-silicon-via testing; MEMS probe; TSV direct probing; TSV surface; current probe technology; interconnect integrity; microelectromechanical system technology; spring-type probe; test signal degradation; undesired scrub marks; Circuit faults; Contacts; Force; Micromechanical devices; Probes; Stress; Through-silicon vias; Microelectromechanical systems; test probe; three-dimensional integrated circuits (3-D IC); through silicon via;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.2012.2237226
