• DocumentCode
    1759873
  • Title

    Nonvolatile memory device based on SiO2/GaN/AlGaN/GaN heterostructure

  • Author

    Lee, June-Goo ; Choi, Soon-Mi ; Park, B.-R. ; Seo, K.-S. ; Kim, Heonhwan ; Cha, Ho-Young

  • Author_Institution
    Sch. of Electron. & Electr. Eng., Hongik Univ., Seoul, South Korea
  • Volume
    49
  • Issue
    8
  • fYear
    2013
  • fDate
    April 11 2013
  • Firstpage
    529
  • Lastpage
    531
  • Abstract
    Demonstrated is a nonvolatile memory device based on a SiO2/GaN/AlGaN/GaN heterostructure in which the upper GaN layer acted as a storage node. Charges were stored in and released from the upper GaN layer by applying positive and negative gate biases, respectively. The top SiO2 layer acted as a blocking layer. The threshold voltage shift was ~ 3 V between the program and erase modes and the retention characteristics were very stable over 10000 s.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; random-access storage; silicon compounds; wide band gap semiconductors; SiO2-GaN-AlGaN-GaN; blocking layer; negative gate biases; nonvolatile memory device; positive gate biases; storage node; upper layer; voltage 3 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.4083
  • Filename
    6527541
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1759873