Title :
Nonvolatile memory device based on SiO2/GaN/AlGaN/GaN heterostructure
Author :
Lee, June-Goo ; Choi, Soon-Mi ; Park, B.-R. ; Seo, K.-S. ; Kim, Heonhwan ; Cha, Ho-Young
Author_Institution :
Sch. of Electron. & Electr. Eng., Hongik Univ., Seoul, South Korea
Abstract :
Demonstrated is a nonvolatile memory device based on a SiO2/GaN/AlGaN/GaN heterostructure in which the upper GaN layer acted as a storage node. Charges were stored in and released from the upper GaN layer by applying positive and negative gate biases, respectively. The top SiO2 layer acted as a blocking layer. The threshold voltage shift was ~ 3 V between the program and erase modes and the retention characteristics were very stable over 10000 s.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; random-access storage; silicon compounds; wide band gap semiconductors; SiO2-GaN-AlGaN-GaN; blocking layer; negative gate biases; nonvolatile memory device; positive gate biases; storage node; upper layer; voltage 3 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.4083
