Title :
2.4-GHz Complementary Metal Oxide Semiconductor Power Amplifier Using High-Quality Factor Wafer-Level Bondwire Spiral Inductor
Author :
Kuei-Cheng Lin ; Hwann-Kaeo Chiou ; Po-Chang Wu ; Wei-Hsien Chen ; Chun-Lin Ko ; Ying-Zong Juang
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
A complementary metal oxide semiconductor (CMOS) power amplifier (PA) using a wafer-level bondwire spiral inductor with high-quality factor (Q) is presented. The inductor is made by three top metal traces connected with bondwire loops above the CMOS chip. The proposed inductor with 2.75-nH inductance achieves a Q of 18, which is three times as much as that of a conventional CMOS standard spiral inductor at 2.4 GHz. The Q of the inductor is over 15 from 2 to 14 GHz, which can cover the frequency band of wireless sensor network and worldwide interoperability for microwave access applications. The output power and power-added efficiency of the PA with the inductor are improved by 1.5 dBm and 7% as compared with those of the fully integrated CMOS PA, respectively.
Keywords :
CMOS analogue integrated circuits; Q-factor; inductors; microwave amplifiers; power amplifiers; wafer bonding; wireless sensor networks; CMOS chip; CMOS standard spiral inductor; PA; bondwire loops; complementary metal oxide semiconductor power amplifier; frequency 2.4 GHz; high-quality factor; microwave access application; power-added efficiency; wafer-level bondwire spiral inductor; wireless sensor network; CMOS integrated circuits; Inductance; Inductors; Metals; Power generation; Spirals; Substrates; Bondwire loop; complementary metal oxide semiconductor (CMOS); power added efficiency (PAE); power amplifier (PA); quality factor $(Q)$; spiral inductor;
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2012.2227260
