• DocumentCode
    1760132
  • Title

    A Time-of-Flight Range Image Sensor With Background Canceling Lock-in Pixels Based on Lateral Electric Field Charge Modulation

  • Author

    Sang-Man Han ; Takasawa, Taishi ; Yasutomi, Keita ; Aoyama, Satoshi ; Kagawa, Keiichiro ; Kawahito, Shoji

  • Author_Institution
    Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
  • Volume
    3
  • Issue
    3
  • fYear
    2015
  • fDate
    42125
  • Firstpage
    267
  • Lastpage
    275
  • Abstract
    This paper presents a CMOS time-of-flight (ToF) range image sensor using high-speed lock-in pixels with background light canceling capability. The proposed lock-in pixel uses MOS gate-induced lateral electric field control of depleted potential of pinned photodiode for implementing a multiple-tap charge modulator while achieving a high-speed charge transfer for high-time resolution. A TOF image sensor with 320 x 240 effective pixels is implemented using a 0.11-μm CMOS image sensor process. The TOF sensor has a range resolution of less than 12 mm without background light and 20 mm under background line for the range from 0.8 to 1.8 m and integration time of 50 ms. The effectiveness of in-pixel background light canceling with a three-tap output pixel is demonstrated.
  • Keywords
    CMOS image sensors; MIS devices; charge exchange; interference suppression; p-i-n photodiodes; time of flight spectra; CMOS image sensor process; CMOS time-of-flight range image sensor; MOS gate induced lateral electric field control; background canceling lock-in pixel; charge transfer; lateral electric field charge modulation; multiple tap charge modulator; pinned photodiode; range resolution; size 0.11 mum; time 50 ms; Capacitors; Electric fields; Electric potential; Image sensors; Logic gates; Modulation; Sensitivity; CMOS image sensor; Time-of-Flight (ToF); depth image; depth image,; lateral electric field charge modu-lator (LEFM); lateral electric field charge modulator (LEFM); pinned pho-todiode; pinned photodiode; time-of-flight (ToF);
  • fLanguage
    English
  • Journal_Title
    Electron Devices Society, IEEE Journal of the
  • Publisher
    ieee
  • ISSN
    2168-6734
  • Type

    jour

  • DOI
    10.1109/JEDS.2014.2382689
  • Filename
    6987251