Title :
InN-Based Optical Waveguides Developed by RF Sputtering for All-Optical Applications at 1.55
Author :
Monteagudo-Lerma, L. ; Naranjo, F.B. ; Jimenez-Rodriguez, M. ; Postigo, P.A. ; Barrios, E. ; Corredera, P. ; Gonzalez-Herraez, M.
Author_Institution :
Dept. de Electron., Univ. de Alcala, Madrid, Spain
Abstract :
We report on the design, fabrication, and optical characterization of InN-based optical waveguides aiming at their application as all-optical limiters at 1.55 μm. The InN guiding layers are grown by radio frequency (RF) sputtering on sapphire substrates. Experimental cutback method and nonlinear optical transmittance measurements were performed for the developed devices. The waveguides present nonlinear behavior associated with two photon absorption process. A nonlinear absorption coefficient ranging from ~43 to 114 cm/GW is estimated from optical measurements. These results open the possibility of using RF sputtering as a low cost and thermally harmless technique for the development and overgrowth of InN-based optical waveguides in future III-nitride all-optical integrated circuits working at telecom wavelengths.
Keywords :
III-V semiconductors; absorption coefficients; indium compounds; integrated optics; nonlinear optics; optical design techniques; optical fabrication; optical limiters; optical materials; optical waveguides; sapphire; sputtering; two-photon processes; Al2O3; III-nitride all-optical integrated circuits; InN; InN guiding layers; InN-based optical waveguide design; InN-based optical waveguide fabrication; InN-based optical waveguide optical characterization; RF sputtering; all-optical applications; all-optical limiters; cutback method; nonlinear absorption coefficient; nonlinear behavior; nonlinear optical transmittance measurements; radiofrequency sputtering; sapphire substrates; telecom wavelengths; two-photon absorption process; wavelength 1.55 mum; Absorption; Nonlinear optics; Optical device fabrication; Optical polarization; Optical pulses; Optical waveguides; Ultrafast optics; Indium nitride; active waveguides; all-optical devices; nonlinear optics; sputtering;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2015.2443873