DocumentCode :
1760513
Title :
Investigation of charge loss mechanism of thickness-scalable trapping layer by variable temperature Kelvin probe force microscopy
Author :
Yulong Han ; Zongliang Huo ; Xinkai Li ; Guoxing Chen ; Xiaonan Yang ; Dong Zhang ; Yong Wang ; Tianchun Ye ; Ming Liu
Author_Institution :
Inst. of Microelectron., Beijing, China
Volume :
34
Issue :
7
fYear :
2013
fDate :
41456
Firstpage :
870
Lastpage :
872
Abstract :
In this letter, the retention properties of charge trapping memory with decreased thickness of ultra-thin HfO2 charge trapping layer are investigated by Kelvin probe force microscopy (KFM) technology. Experiment results show that retention properties became worse with the reducing of HfO2 thickness and increasing of temperature. Based on total remaining charge density and lateral leakage charge density extracted from the contact potential differences, we find that vertical charge leakage acted as a dominant role of charge loss with respect to lateral charge redistribution. Furthermore, effective trap energies are extracted from KFM analysis at high temperatures and it is concluded that the suppression of lateral charge redistribution in thinner HfO2 layer results from deeper trap energies.
Keywords :
NAND circuits; atomic force microscopy; contact potential; flash memories; hafnium compounds; high-k dielectric thin films; HfO2; KFM technology; NAND flash memory; charge loss mechanism; charge trapping memory; contact potential differences; deeper trap energy; effective trap energy; lateral charge redistribution suppression; lateral leakage charge density; retention property; thickness-scalable trapping layer; total remaining charge density; variable temperature Kelvin probe force microscopy; vertical charge leakage; Charge carrier processes; Hafnium compounds; Scanning probe microscopy; ${rm HfO}_{2}$; Charge trapping memory (CTM); kelvin probe force microscopy (KFM); retention;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2260853
Filename :
6527917
Link To Document :
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