Title :
Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology
Author :
Weiss, Michael ; Majek, Cedric ; Sahoo, Abhaya Kumar ; Maneux, Cristell ; Mazouffre, O. ; Chevalier, P. ; Chantre, Alain ; Zimmer, T.
Author_Institution :
IMS Lab., Univ. de Bordeaux, Talence, France
Abstract :
In this letter, we report a record gate delay of 1.65 ps of a current-mode logic ring oscillator (RO) fabricated with an advanced SiGe:C heterojunction bipolar transistor technology. Outstanding performance has been achieved through process and layout optimization and inductive peaking in series with the load resistor. The RO operates at a single-ended voltage swing of 200 mV. The transistors used in the RO exhibit a peak transit frequency fT of 310 GHz and a peak maximum oscillation frequency fmax of 400 GHz. To the best of our knowledge, a gate delay of 1.65 ps is the fastest result for a bipolar transistor-based technology.
Keywords :
Ge-Si alloys; carbon; current-mode logic; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave oscillators; semiconductor materials; HBT technology; RO; SiGe:C; current-mode logic ring oscillator; gate delay; heterojunction bipolar transistor technology; inductive peaking; layout optimization; load resistor; optimized ring oscillator; voltage 200 mV; Delays; Heterojunction bipolar transistors; Logic gates; Resistance; Ring oscillators; Silicon germanium; Heterojunction bipolar transistors (HBT); microwave circuits; ring oscillators (ROs); semiconductor device measurement; silicon germanium (SiGe);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2277550
