Title :
Switching Loss Analysis of 4.5-kV–5.5-kA IGCTs Within a 3L-ANPC Phase Leg Prototype
Author :
Andler, Daniel ; Alvarez, R. ; Bernet, Steffen ; Rodriguez, Jose
Author_Institution :
Leistungselektron., Elektrotech. Inst., Tech. Univ. Dresden, Dresden, Germany
Abstract :
Three-level active neutral-point-clamped (NPC) (3L-ANPC) voltage-source converters (3L-ANPC-VSCs) enable additional switch states and commutations compared to the three-level NPC voltage-source converters (3L-NPC-VSCs). They are used to overcome one important disadvantage of the 3L-NPC-VSC, the unequal semiconductor loss distribution. With an accurate switching model (obtained directly from the measurements), it is possible to improve the junction temperature distribution among the power devices, increasing the 3L-ANPC-VSC output power and/or increasing the frequency and/or decreasing the derating of the converter. This paper presents the characterization of a 4.5-kV-5.5-kA integrated gate-commutated thyristor (IGCT) within a 3L-ANPC phase leg. A quantitative analysis of the switching losses using 5SHY55L4500 IGCTs and D1961SH45T press-pack diodes for a current range from 1 to 4.5 kA and junction temperatures between 25 ° C and 125 ° C is presented. The 3L-ANPC phase leg performs 32 different commutations. Each commutation exhibits different switching losses, as a result of the different commutation paths and their stray inductances. This switching energy range is presented and quantified. Finally, a simplified switching loss model considering the maximal switching losses in terms of the commutation current and the junction temperature is presented.
Keywords :
commutation; invertors; power semiconductor diodes; switching convertors; temperature distribution; thyristor convertors; thyristors; 3L ANPC VSC; 3L ANPC phase leg prototype; 3L NPC VSC; 5SHY55L4500 IGCT; D1961SH45T press pack diode; active neutral point clamped converter; current 1 kA to 4.5 kA; current 5.5 kA; integrated gate commutated thyristor; junction temperature distribution; maximal switching loss; power device; quantitative analysis; semiconductor loss distribution; stray inductance; switching energy range; switching loss analysis; three level NPC voltage-source converter; voltage 4.5 kV; Clamps; Current measurement; Rails; Semiconductor diodes; Switches; Switching loss; Transient analysis; Integrated-gate commutated thyristors (IGCTs); inverters; multilevel systems; power semiconductor devices; snubbers;
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.2013.2267331