• DocumentCode
    1760807
  • Title

    A Multiple Time-Scale Power Amplifier Behavioral Model for Linearity and Efficiency Calculations

  • Author

    Pedro, Jose C. ; Cabral, Pedro M. ; Cunha, Telmo R. ; Lavrador, Pedro M.

  • Author_Institution
    DETI, Univ. de Aveiro, Aveiro, Portugal
  • Volume
    61
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    606
  • Lastpage
    615
  • Abstract
    This work describes a new power amplifier, PA, behavioral model intended to predict both the PA amplitude and phase input-output signal relationship and the average or instantaneous dc power consumption and thus average or instantaneous signal-dependent efficiency. Hence, contrary to other previously published PA behavioral models, such a model is not only capable of describing the complex low-pass equivalent fundamental zone output, but also the real low-pass current consumption output. In addition, a special attention is paid to accurately account for the multiple time-scale dynamics shown by modern GaN HEMT based high power amplifiers.
  • Keywords
    III-V semiconductors; gallium compounds; high electron mobility transistors; low-power electronics; power amplifiers; DC power consumption; GaN; GaN HEMT; PA amplitude; efficiency calculation; high power amplifier; linearity calculation; low-pass current consumption output; low-pass equivalent fundamental zone; multiple time-scale power amplifier; phase input-output signal relationship; signal-dependent efficiency; time-scale dynamics; Gallium nitride; HEMTs; Linearity; Nonlinear dynamical systems; Power amplifiers; Predictive models; Radio frequency; Behavioral models; RF power amplifiers; long term memory effects; semiconductor device modeling;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2012.2227779
  • Filename
    6384851