DocumentCode
1760807
Title
A Multiple Time-Scale Power Amplifier Behavioral Model for Linearity and Efficiency Calculations
Author
Pedro, Jose C. ; Cabral, Pedro M. ; Cunha, Telmo R. ; Lavrador, Pedro M.
Author_Institution
DETI, Univ. de Aveiro, Aveiro, Portugal
Volume
61
Issue
1
fYear
2013
fDate
Jan. 2013
Firstpage
606
Lastpage
615
Abstract
This work describes a new power amplifier, PA, behavioral model intended to predict both the PA amplitude and phase input-output signal relationship and the average or instantaneous dc power consumption and thus average or instantaneous signal-dependent efficiency. Hence, contrary to other previously published PA behavioral models, such a model is not only capable of describing the complex low-pass equivalent fundamental zone output, but also the real low-pass current consumption output. In addition, a special attention is paid to accurately account for the multiple time-scale dynamics shown by modern GaN HEMT based high power amplifiers.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; low-power electronics; power amplifiers; DC power consumption; GaN; GaN HEMT; PA amplitude; efficiency calculation; high power amplifier; linearity calculation; low-pass current consumption output; low-pass equivalent fundamental zone; multiple time-scale power amplifier; phase input-output signal relationship; signal-dependent efficiency; time-scale dynamics; Gallium nitride; HEMTs; Linearity; Nonlinear dynamical systems; Power amplifiers; Predictive models; Radio frequency; Behavioral models; RF power amplifiers; long term memory effects; semiconductor device modeling;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2012.2227779
Filename
6384851
Link To Document