• DocumentCode
    1760822
  • Title

    A 76–84 GHz SiGe Power Amplifier Array Employing Low-Loss Four-Way Differential Combining Transformer

  • Author

    Thian, Mury ; Tiebout, Marc ; Buchanan, Neil B. ; Fusco, Vincent F. ; Dielacher, Franz

  • Author_Institution
    ECIT Inst., Queen´s Univ. of Belfast, Belfast, UK
  • Volume
    61
  • Issue
    2
  • fYear
    2013
  • fDate
    Feb. 2013
  • Firstpage
    931
  • Lastpage
    938
  • Abstract
    This paper presents holistic design of a novel four-way differential power-combining transformer for use in millimeter-wave power-amplifier (PA). The combiner with an inner radius of 25 μm exhibits a record low insertion loss of 1.25 dB at 83.5 GHz. It is designed to simultaneously act as a balanced-to-unbalanced converter, removing the need for additional BALUNs typically required in differential circuits. A complete circuit comprised of a power splitter, two-stage differential cascode PA array, a power combiner as well as input and output matching elements was designed and realized in SiGe technology with fT/fmax 170/250 GHz. Measured small-signal gain of at least 16.8 dB was obtained from 76.4 to 85.3 GHz with a peak 19.5 dB at 83 GHz. The prototype delivered 12.5 dBm output referred 1 dB compression point and 14 dBm saturated output power when operated from a 3.2 V dc supply voltage at 78 GHz.
  • Keywords
    Ge-Si alloys; baluns; differential amplifiers; millimetre wave power amplifiers; power combiners; power transformers; semiconductor materials; SiGe; balanced-to-unbalanced converter; balun; differential circuits; frequency 170 GHz; frequency 250 GHz; frequency 76 GHz to 84 GHz; loss 1.25 dB; low-loss four-way differential power combining transformer; matching elements; millimeter-wave power-amplifier; power amplifier array; power splitter; radius 25 mum; two-stage differential cascode PA array; voltage 3.2 V; Gain; Impedance matching; Insertion loss; Power generation; Silicon germanium; Transistors; Windings; $E$ -band; Cascode; differential circuit; hetero-junction bipolar transistor (HBT); integrated circuit (IC); millimeter-wave; power amplifier; power combiner; silicon germanium (SiGe); transformer;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2012.2231425
  • Filename
    6384853