Analysis of Self-Heating Effect on Short Channel Amorphous InGaZnO Thin-Film Transistors

Author

Seok-Woo Lee ; Pyo Jin Jeon ; Kyunghee Choi ; Sung-Wook Min ; Hyeokjae Kwon ; Seongil Im

Author_Institution

Inst. of Phys. & Appl. Phys., Yonsei Univ., Seoul, South Korea

Volume

36

Issue

5

fYear

2015

fDate

42125

Firstpage

472

Lastpage

474

Abstract

We report on a thin-flim transistor (TFT) degradation encountered in short channel amorphous indium-gallium-zinc-oxide TFTs under high applied power condition leading to self-heating. Negative shift was observed in the initial stage of stress period followed by positive shift with severe degradation. To understand the causes of this phenomenon in depth, trap density-of-states were measured by photo-excited charge-collection spectroscopy and time-dependent recovery of stressed device samples was also studied. As a result, we found that the combination of hot carrier effect and self-heating in channel was responsible for the degradation.

Keywords

amorphous semiconductors; gallium compounds; hot carriers; indium compounds; thin film transistors; zinc compounds; InGaZnO; TFT degradation; hot carrier effect; indium-gallium-zinc-oxide; negative shift; photoexcited charge-collection spectroscopy; positive shift; self-heating effect analysis; short channel amorphous thin-film transistor; time-dependent recovery; Degradation; Density measurement; Electron traps; Stress; Stress measurement; Thin film transistors; Amorphous InGaZnO (a-IGZO); amorphous InGaZnO (a-IGZO),; density of states; hot carrier effect; self-heating effect; thin-film transistor;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2411742

Filename

7057649