DocumentCode :
1760875
Title :
An Ultra-Low Specific ON-Resistance LDMOST With Self-Driven Split Gate
Author :
Wenfang Du ; Xinjiang Lyu ; Wai Tung Ng ; Xingbi Chen
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices of China, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Volume :
62
Issue :
4
fYear :
2015
fDate :
42095
Firstpage :
1230
Lastpage :
1234
Abstract :
An n -Laterally Double Diffused Metal Oxide Semiconductor Field Effect Transistor (LDMOST) with self-driven split p -top gate is studied. By integrating a low-voltage charge pump circuit, a constant positive voltage ( \\approx 10 V) is self-generated in the OFF-state and applied to the split p -top electrode in the ON-state. This voltage assists the accumulation of electrons near the surface of the {n} -drift region. As a result, the specific ON-resistance R_{{\\rm {ON, sp}}} is reduced without an increase in effective gate charge Q_{G} . Moreover, the adaptation of the optimum variation lateral doping enables a shorter {n} -drift region length to support the same breakdown voltage. The simulation results indicate that for a 600 V device, the R_{{\\rm {on, sp}}} is 20.7 text{m}\\Omega \\cdot text\\rm {cm}^{2} . This is approximately five times smaller than a conventional double REduced SURface Field LDMOST.
Keywords :
MOSFET; charge pump circuits; electric breakdown; electrodes; semiconductor device models; semiconductor doping; breakdown voltage; constant positive voltage; gate charge; low-voltage charge pump circuit; n-drift region length; n-laterally double diffused metal oxide semiconductor field effect transistor; optimum variation lateral doping; p-top electrode; self-driven split gate; self-driven split p-top gate; ultralow specific on-resistance LDMOST; voltage 600 V; Capacitors; Charge pumps; Doping; Educational institutions; Electrodes; Logic gates; Resistance; Accumulated electrons; built-in charge pump; gate charge; specific ON-resistance; specific ON-resistance.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2406074
Filename :
7057656
Link To Document :
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