An
-Laterally Double Diffused Metal Oxide Semiconductor Field Effect Transistor (LDMOST) with self-driven split
-top gate is studied. By integrating a low-voltage charge pump circuit, a constant positive voltage (
V) is self-generated in the OFF-state and applied to the split
-top electrode in the ON-state. This voltage assists the accumulation of electrons near the surface of the
-drift region. As a result, the specific ON-resistance
is reduced without an increase in effective gate charge
. Moreover, the adaptation of the optimum variation lateral doping enables a shorter
-drift region length to support the same breakdown voltage. The simulation results indicate that for a 600 V device, the
is 20.7
. This is approximately five times smaller than a conventional double REduced SURface Field LDMOST.