An Ultra-Low Specific ON-Resistance LDMOST With Self-Driven Split Gate

Author

Wenfang Du ; Xinjiang Lyu ; Wai Tung Ng ; Xingbi Chen

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices of China, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

62

Issue

4

fYear

2015

fDate

42095

Firstpage

1230

Lastpage

1234

Abstract

An $n$ -Laterally Double Diffused Metal Oxide Semiconductor Field Effect Transistor (LDMOST) with self-driven split $p$ -top gate is studied. By integrating a low-voltage charge pump circuit, a constant positive voltage ( $\\approx 10$ V) is self-generated in the OFF-state and applied to the split $p$ -top electrode in the ON-state. This voltage assists the accumulation of electrons near the surface of the ${n}$ -drift region. As a result, the specific ON-resistance $R_{{\\rm {ON, sp}}}$ is reduced without an increase in effective gate charge $Q_{G}$ . Moreover, the adaptation of the optimum variation lateral doping enables a shorter ${n}$ -drift region length to support the same breakdown voltage. The simulation results indicate that for a 600 V device, the $R_{{\\rm {on, sp}}}$ is 20.7 $text{m}\\Omega \\cdot text\\rm {cm}^{2}$ . This is approximately five times smaller than a conventional double REduced SURface Field LDMOST.

Keywords

MOSFET; charge pump circuits; electric breakdown; electrodes; semiconductor device models; semiconductor doping; breakdown voltage; constant positive voltage; gate charge; low-voltage charge pump circuit; n-drift region length; n-laterally double diffused metal oxide semiconductor field effect transistor; optimum variation lateral doping; p-top electrode; self-driven split gate; self-driven split p-top gate; ultralow specific on-resistance LDMOST; voltage 600 V; Capacitors; Charge pumps; Doping; Educational institutions; Electrodes; Logic gates; Resistance; Accumulated electrons; built-in charge pump; gate charge; specific ON-resistance; specific ON-resistance.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2406074

Filename

7057656