DocumentCode :
1761116
Title :
1000-H Evaluation of a 1200-V, 880-A All-SiC Dual Module
Author :
Salem, Thomas E. ; Wood, Robert A.
Author_Institution :
U.S. Naval Acad., Annapolis, MD, USA
Volume :
29
Issue :
5
fYear :
2014
fDate :
41760
Firstpage :
2192
Lastpage :
2198
Abstract :
The commercial availability of silicon-carbide (SiC) power devices began over a decade ago with the introduction of SiC diodes and has expanded in complexity the past few years to include the offering of SiC transistors and power modules. Recently, characterization of a 1200-V, 800-A all-SiC dual module designed for large-scale electric military vehicle applications has been reported. This paper expands on the previous work by presenting details and results obtained from a long-term evaluation of a similar module. The module has successfully operated in an experimental circuit at a switching frequency of 10 kHz while running vehicle load profiles for over 1000 h and exhibited little change in device characteristics. Of all measured characteristics, none had a significant unfavorable change greater than 10% from its initial value. The 1000 h of circuit operation represents 11 783 miles of use or over half of the expected lifecycle in a military vehicle traction inverter.
Keywords :
electric vehicles; invertors; military vehicles; power transistors; silicon compounds; traction; wide band gap semiconductors; SiC; current 880 A; frequency 10 kHz; large-scale electric military vehicle; military vehicle traction inverter; power devices; power modules; time 1000 h; transistors; vehicle load; voltage 1200 V; Electric vehicles; high-power; inverter; metal –oxide–semiconductor field-effect transistors (MOSFET); silicon carbide;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2013.2265661
Filename :
6527982
Link To Document :
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