• DocumentCode
    1761117
  • Title

    Power Loss and Switching Noise Reduction Techniques for Single-Inductor Multiple-Output Regulator

  • Author

    Xiaocheng Jing ; Mok, Philip K. T.

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
  • Volume
    60
  • Issue
    10
  • fYear
    2013
  • fDate
    Oct. 2013
  • Firstpage
    2788
  • Lastpage
    2798
  • Abstract
    A new gate drive circuit to reduce the power loss and switching noise of single-inductor-multiple-output regulators is presented. Efficiency degradation and switching noise induced by the cross-talk of the voltages and currents within the power stage and buffer are analyzed. A shoot-through-current (STC) controlled buffer with four-transistor (4T) inverters is presented, and the 4T inverter enables internal STC control and generates two outputs with dead-time. To further isolate the cross-talk, two separate high voltage selectors (HVS) with the proposed buffer are used to power the buffer and the power P-MOSFET body, respectively. Simulation results show that the peak and average currents of the proposed buffer are smaller and much less sensitive to the buffer size than those of the traditional inverter based buffer. Two single-inductor-dual-output boost converters with and without the proposed techniques have been fabricated in a 0.35- μm CMOS process. Experimental results show that the maximum efficiency is increased from 87.8% to 91.6% with the proposed technique.
  • Keywords
    CMOS integrated circuits; DC-DC power convertors; MOSFET; buffer circuits; integrated circuit noise; invertors; 4T inverter; CMOS process; HVS; P-MOSFET body; efficiency degradation; four-transistor inverters; gate drive circuit; high voltage selectors; inverter based buffer; power loss reduction; shoot-through-current controlled buffer; single-inductor multiple-output regulator; single-inductor-dual-output boost converters; size 0.35 mum; switching noise reduction; Capacitors; Inductors; Logic gates; MOS devices; Noise; Switches; Switching loss; Buffer; SIMO DC-DC converter; power loss; shoot-through current; switching noise;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2013.2244327
  • Filename
    6481479