A Comparative Passivation Study for InAs/GaSb Pin Superlattice Photodetectors

Author

Salihoglu, O. ; Muti, A. ; Aydinli, A.

Author_Institution

Dept. of Phys., Bilkent Univ., Ankara, Turkey

Volume

49

Issue

8

fYear

2013

fDate

Aug. 2013

Firstpage

661

Lastpage

666

Abstract

In the quest to find ever better passivation techniques for infrared photodetectors, we explore several passivation layers using atomic layer deposition (ALD). We compare the impact of these layers on detectors fabricated under same conditions. We use ALD deposited Al₂O₃, HfO₂, TiO₂, ZnO, plasma enhanced chemical vapor deposition deposited SiO₂, Si₃N₄, and sulfur containing octadecanethiol self assembled monolayer passivation layers on InAs/GaSb p-i-n superlattice diodes with an average cutoff wavelength of 5.1 μm. Passivated and unpassivated photodetectors compared for their electrical performances.

Keywords

III-V semiconductors; aluminium compounds; atomic layer deposition; gallium compounds; hafnium compounds; indium compounds; infrared detectors; monolayers; organic compounds; p-i-n photodiodes; passivation; photodetectors; plasma CVD; self-assembly; semiconductor superlattices; silicon compounds; titanium compounds; zinc compounds; ALD; Al₂O₃; HfO₂; InAs-GaSb; Si₃N₄; SiO₂; TiO₂; ZnO; atomic layer deposition; average cutoff wavelength; electrical performances; infrared photodetectors; p-i-n superlattice diodes; passivation layers; pin superlattice photodetectors; plasma enhanced chemical vapor deposition; sulfur containing octadecanethiol self assembled monolayer; wavelength 5.1 mum; Aluminum oxide; Dark current; Passivation; Photodetectors; Superlattices; Zinc oxide; ALD; InAs/GaSb; Infrared; ODT; Passivation; Photodetector; Thiol;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2013.2267553

Filename

6527989