DocumentCode
1761545
Title
Impact of Source–Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n-MOSFETs
Author
Ioannidis, E.G. ; Theodorou, C.G. ; Haendler, S. ; Josse, E. ; Dimitriadis, C.A. ; Ghibaudo, G.
Author_Institution
Lab. d´Hyperfreq. et de Caracterisation, Inst. de Microelectron., Grenoble, France
Volume
36
Issue
5
fYear
2015
fDate
42125
Firstpage
433
Lastpage
435
Abstract
In this letter, we demonstrate the existence of the source-drain series resistance mismatch and its impact on drain current variability with regard to the other mismatch parameters. To this end, we propose a new methodology for the drain current mismatch study based on Y-function, enabling a precise determination of the various variability sources in advanced fully depleted silicon on insulator (SOI) MOS devices.
Keywords
MOSFET; silicon-on-insulator; Y-function; advanced fully depleted n-MOSFET; drain current mismatch; silicon on insulator MOS devices; source-drain series resistance mismatch; variability sources; CMOS integrated circuits; Current measurement; Immune system; Logic gates; MOSFET; Resistance; CMOS; Static mismatch variability; Y-function characterization; Yfunction; characterization,; matching;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2015.2411289
Filename
7058382
Link To Document