Title :
Transmission Engineering as a Route to Subthermal Switching
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
The physics of low subthreshold devices is interpreted in terms of a gate-dependent change in their mode-averaged transmission function, in addition to a capacitive shift in their overall mode spectrum. Accordingly, we explore a variety of subthermal switches that alter the bandwidth, bandgap or amplitude of the transmission, and combinations thereof. The Landauer theory for current flow provides a convenient way to derive the subthreshold swing in each case analytically and suggests ways to beat the Boltzmann limit.
Keywords :
Boltzmann equation; field effect transistors; microswitches; Boltzmann limit; Landauer theory; capacitive shift; gate-dependent change; low subthreshold devices; mode spectrum; mode-averaged transmission function; subthermal switching; subthreshold swing; transmission engineering; Equations; Graphene; Junctions; Logic gates; Mathematical model; Photonic band gap; Tunneling; Field effect transistors; nanoelectromechanical systems; nanoelectronics; nanoscale devices; tunneling;
Journal_Title :
Electron Devices Society, IEEE Journal of the
DOI :
10.1109/JEDS.2015.2411622
