Impact of Heat Spreaders on Thermal Performance of III-N-Based Laser Diode

Author

Kuc, Maciej ; Wasiak, Michal ; Sarzaa, Robert Piotr

Author_Institution

Inst. of Phys., Lodz Univ. of Technol., Lodz, Poland

Volume

5

Issue

4

fYear

2015

fDate

42095

Firstpage

474

Lastpage

482

Abstract

This paper explores the effect on optical output power of modifications to the package assembly of a blue-violet III-N-based p-down edge-emitting ridge-waveguide laser diode grown on bulk GaN crystal. The calculations were carried out using a 3-D self-consistent finite-element model. We focus on thermal analyses of the size and thermal conductivity of the heat spreader (mainly made of natural diamond and chemical vapor deposition diamond) and on the thickness of the solder. The results open the possibility for multiple increases in output power, due to a considerable increase in the power conversion efficiency of the laser diode.

Keywords

III-V semiconductors; diamond; finite element analysis; gallium compounds; ridge waveguides; semiconductor lasers; solders; thermal analysis; thermal conductivity; wide band gap semiconductors; 3D self-consistent finite-element model; FEM; GaN; III-N-based laser diode; bulk crystal; chemical vapor deposition diamond; heat spreaders; natural diamond; optical output power; p-down edge-emitting ridge-waveguide diode; power conversion efficiency; solder thickness; thermal analyses; thermal conductivity; thermal performance; Diode lasers; Heat sinks; Heating; Laser modes; Semiconductor lasers; Thermal conductivity; Thermal resistance; Computer aided analysis; semiconductor device packaging; semiconductor lasers; semiconductor lasers.;

fLanguage

English

Journal_Title

Components, Packaging and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-3950

Type

jour

DOI

10.1109/TCPMT.2015.2408374

Filename

7058435