• DocumentCode
    1761988
  • Title

    Solution-Derived Zn-Doped GaO Films as Alignment Layers for Twisted-Nematic Liquid Crystal Displays Using Ion-Beam Bombardment

  • Author

    Yun-Gun Lee ; Gi-Seok Heo ; Hong-Gyu Park ; Hae-Chang Jeong ; Ju Hwan Lee ; Dae-Shik Seo

  • Author_Institution
    Dept. of Electr. & Eng., Yonsei Univ., Seoul, South Korea
  • Volume
    36
  • Issue
    8
  • fYear
    2015
  • fDate
    Aug. 2015
  • Firstpage
    817
  • Lastpage
    819
  • Abstract
    This letter demonstrates liquid crystal (LC) alignment on solution-derived Zn-doped GaO (ZnGaO) films using an ion beam (IB) method. Homogeneous and uniform LC alignment was achieved on IB-irradiated ZnGaO films. X-ray photoelectron spectroscopy was used to analyze the chemical bonding states of the IB-irradiated ZnGaO surfaces to verify the compositional behavior for LC alignment. In addition, ZnGaO films with twisted nematic cells exhibited electro-optical characteristics comparable with those of a conventional polyimide layer for potential LC display applications.
  • Keywords
    III-VI semiconductors; X-ray photoelectron spectra; bonds (chemical); electro-optical effects; gallium compounds; ion beam effects; liquid crystal displays; liquid phase deposition; molecular orientation; nematic liquid crystals; semiconductor growth; semiconductor thin films; zinc compounds; X-ray photoelectron spectroscopy; XPS; ZnGaO; alignment layers; chemical bonding states; compositional behavior; electrooptical characteristics; homogeneous liquid crystal alignment; ion beam-irradiated ZnGaO films; ion beam-irradiated ZnGaO surfaces; ion-beam bombardment; solution-derived Zn-doped GaO films; twisted nematic cells; twisted-nematic liquid crystal displays; uniform liquid crystal alignment; Films; Ion beams; Liquid crystal displays; Liquid crystals; Radiation effects; Surface morphology; Voltage measurement; Electro-optical characteristics; ZnGaO; electro-optical characteristics; ion beam irradiation; liquid crystal alignment; solution process;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2445312
  • Filename
    7122885