Title :
Observation of spontaneous Raman scattering in hydrogenated amorphous silicon wire waveguide at 1.55 μm
Author :
Tanizawa, Ken ; Suda, Seiichi ; Sakakibara, Y. ; Kamei, Toshihiro ; Takei, Ryohei ; Kawashima, Hitoshi ; Namiki, Shu ; Mori, Marco ; Ishikawa, Hiroshi
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
Reported is the measurement of spontaneous Raman scattering in a 13 mm-long hydrogenated amorphous silicon wire waveguide with ultrafast carrier decay time. Broad Raman emission with a peak wavelength of 1.55 μm was observed for a pump wavelength of 1.44 μm. The Raman frequency shift is 14.3 THz, and Raman gain coefficient is estimated to be 0.15 W- 1cm- 1.
Keywords :
Raman spectra; amorphous semiconductors; optical pumping; optical waveguides; silicon; Raman frequency shift; Raman gain coefficient; carrier decay time; frequency 14.3 THz; hydrogenated amorphous silicon wire waveguide; optical pump; size 13 mm; spontaneous Raman scattering; wavelength 1.44 nm; wavelength 1.55 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.0461
