• DocumentCode
    1761997
  • Title

    Observation of spontaneous Raman scattering in hydrogenated amorphous silicon wire waveguide at 1.55 μm

  • Author

    Tanizawa, Ken ; Suda, Seiichi ; Sakakibara, Y. ; Kamei, Toshihiro ; Takei, Ryohei ; Kawashima, Hitoshi ; Namiki, Shu ; Mori, Marco ; Ishikawa, Hiroshi

  • Author_Institution
    Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
  • Volume
    49
  • Issue
    9
  • fYear
    2013
  • fDate
    April 25 2013
  • Firstpage
    610
  • Lastpage
    612
  • Abstract
    Reported is the measurement of spontaneous Raman scattering in a 13 mm-long hydrogenated amorphous silicon wire waveguide with ultrafast carrier decay time. Broad Raman emission with a peak wavelength of 1.55 μm was observed for a pump wavelength of 1.44 μm. The Raman frequency shift is 14.3 THz, and Raman gain coefficient is estimated to be 0.15 W- 1cm- 1.
  • Keywords
    Raman spectra; amorphous semiconductors; optical pumping; optical waveguides; silicon; Raman frequency shift; Raman gain coefficient; carrier decay time; frequency 14.3 THz; hydrogenated amorphous silicon wire waveguide; optical pump; size 13 mm; spontaneous Raman scattering; wavelength 1.44 nm; wavelength 1.55 nm;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.0461
  • Filename
    6528122
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1761997