Title :
Oscillatory Anisotropic Magnetoresistance Arising From Quantum Well States in Au/Fe(001) Bilayers
Author :
Li, J.X. ; Jia, M.W. ; Sun, L. ; Ding, Z. ; Chen, B.L. ; Wu, Y.Z.
Author_Institution :
Dept. of Phys., Fudan Univ., Shanghai, China
Abstract :
The anisotropic magnetoresistance (AMR) in epitaxial Au/Fe(001) bilayers grown on MgO(001) substrate was systematically studied as a function of Au thickness over the temperature range 6300K. The AMR oscillates with a period of about 1.8 nm in Au thickness at low temperatures and also oscillates at certain higher temperatures. Such novel oscillatory AMR behavior is attributed to quantum well states in Au ultrathin films.
Keywords :
enhanced magnetoresistance; gold; iron; magnetic multilayers; quantum wells; Au-Fe; bilayers; oscillatory AMR behavior; oscillatory anisotropic magnetoresistance; quantum well states; temperature 6 K to 300 K; Films; Gold; Iron; Oscillators; Perpendicular magnetic anisotropy; Substrates; Magnetic and Spintronic Materials; Magnetic films; Magneto-Electronics; Magneto-electronics; Magnetoresistance; Spin Electronics; Thin films; magnetic and spintronic materials; magnetic films; magnetoresistance; spin electronics; thin films;
Journal_Title :
Magnetics Letters, IEEE
DOI :
10.1109/LMAG.2015.2444831
