A Model of Air-Gap Through-Silicon Vias (TSVs) for Microwave Applications

Author

Xiaoxian Liu ; Zhangming Zhu ; Yintang Yang ; Ruixue Ding

Author_Institution

Sch. of Microelectron., Xidian Univ., Xi´an, China

Volume

25

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

493

Lastpage

495

Abstract

In this letter, Ground-Signal-Ground type through-silicon vias (TSVs) are designed to achieve millimeter wave applications in three-dimensional integrated circuits (3-D ICs). Air-gap is exploited as the insulation layer due to the low permittivity. The accurate wideband equivalent-circuit model are established with frequency up to 20 GHz by using a set of resistance inductance capacitance conductance (RLGC) parameters, which are derived from the different design physical parameters and materials of the TSVs. Good agreements between the proposed models and full-wave simulation of Ansoft´s HFSS are shown over a wide frequency range of interest.

Keywords

air gaps; equivalent circuits; insulation; microwave integrated circuits; millimetre wave integrated circuits; permittivity; three-dimensional integrated circuits; 3D IC; Ansoft´s HFSS; RLGC parameter; air-gap through-silicon vias model; ground-signal-ground type TSV; insulation layer; microwave application; millimeter wave application; permittivity; resistance inductance capacitance conductance parameter; three-dimensional integrated circuit; wide frequency range; wideband equivalent-circuit model; Air gaps; Atmospheric modeling; Inductance; Integrated circuit modeling; Silicon; Solid modeling; Through-silicon vias; Air-gap through-silicon vias (TSVs); GSG-type; equivalent-circuit model; high speed three-dimensional integrated circuits (3-D ICs);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2015.2440659

Filename

7122937