DocumentCode :
1762208
Title :
Aging-Aware Reliable Multiplier Design With Adaptive Hold Logic
Author :
Ing-Chao Lin ; Yu-Hung Cho ; Yi-Ming Yang
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
23
Issue :
3
fYear :
2015
fDate :
42064
Firstpage :
544
Lastpage :
556
Abstract :
Digital multipliers are among the most critical arithmetic functional units. The overall performance of these systems depends on the throughput of the multiplier. Meanwhile, the negative bias temperature instability effect occurs when a pMOS transistor is under negative bias (Vgs = -Vdd), increasing the threshold voltage of the pMOS transistor, and reducing multiplier speed. A similar phenomenon, positive bias temperature instability, occurs when an nMOS transistor is under positive bias. Both effects degrade transistor speed, and in the long term, the system may fail due to timing violations. Therefore, it is important to design reliable high-performance multipliers. In this paper, we propose an aging-aware multiplier design with a novel adaptive hold logic (AHL) circuit. The multiplier is able to provide higher throughput through the variable latency and can adjust the AHL circuit to mitigate performance degradation that is due to the aging effect. Moreover, the proposed architecture can be applied to a columnor row-bypassing multiplier. The experimental results show that our proposed architecture with 16 × 16 and 32 × 32 column-bypassing multipliers can attain up to 62.88% and 76.28% performance improvement, respectively, compared with 16×16 and 32×32 fixed-latency column-bypassing multipliers. Furthermore, our proposed architecture with 16 × 16 and 32 × 32 row-bypassing multipliers can achieve up to 80.17% and 69.40% performance improvement as compared with 16×16 and 32 × 32 fixed-latency row-bypassing multipliers.
Keywords :
MOSFET; VLSI; ageing; integrated circuit design; integrated circuit reliability; integrated logic circuits; negative bias temperature instability; semiconductor device reliability; adaptive hold logic circuit; aging-aware reliable multiplier design; column-bypassing multiplier; digital multipliers; nMOS transistor; negative bias temperature instability; pMOS transistor; positive bias temperature instability; row-bypassing multiplier; variable latency; Adders; Aging; Delays; Logic gates; Reliability engineering; Adaptive hold logic (AHL); negative bias temperature instability (NBTI); positive bias temperature instability (PBTI); reliable multiplier; variable latency; variable latency.;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2014.2311300
Filename :
6807819
Link To Document :
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