• DocumentCode
    1762286
  • Title

    A 1.95 GHz Fully Integrated Envelope Elimination and Restoration CMOS Power Amplifier Using Timing Alignment Technique for WCDMA and LTE

  • Author

    Oishi, Kazuaki ; Yoshida, Erika ; Sakai, Yoshiki ; Takauchi, Hideki ; Kawano, Yoshihiro ; Shirai, Nobuyuki ; Kano, Hiroyuki ; Kudo, Motoi ; Murakami, Toshiyuki ; Tamura, Takuya ; Kawai, Shigeaki ; Suto, Kuniaki ; Yamazaki, Hiroshi ; Mori, Takayoshi

  • Author_Institution
    Fujitsu Labs. Ltd., Kawasaki, Japan
  • Volume
    49
  • Issue
    12
  • fYear
    2014
  • fDate
    Dec. 2014
  • Firstpage
    2915
  • Lastpage
    2924
  • Abstract
    A fully integrated envelope elimination and restoration (EER) CMOS power amplifier (PA) has been developed for WCDMA and LTE handsets. EER is a supply modulation technique that first divides modulated RF signal into envelope and phase signals and then restores it at a switching PA output. Supply voltage of the switching PA is modulated by the envelope signal through a high-speed supply modulator. EER PA is highly efficient due to the switching PA and the supply modulation. However, it generally has difficulty, especially for a wide bandwidth baseband application like LTE, achieving a wide bandwidth for phase signal path and highly accurate timing between envelope and phase signals. To overcome these challenges, an envelope/phase generator based on a mixer and a limiter was proposed to generate the wide bandwidth phase signal, and a timing aligner based on a delay locked loop with a variable high-pass filter (HPF) was proposed to compensate for the timing mismatch. The chip was implemented in 90 nm CMOS technology. Measured power-added efficiency (PAE) and adjacent channel leakage ratio (ACLR) were 39% and -41 dBc for WCDMA, and measured PAE and ACLR E-UTRA1 were 32% and -33 dBc for 20 MHz-BW LTE.
  • Keywords
    CMOS analogue integrated circuits; Long Term Evolution; code division multiple access; delay lock loops; high-pass filters; modulation; power amplifiers; CMOS power amplifier; CMOS technology; LTE handsets; WCDMA; adjacent channel leakage ratio; bandwidth 20 MHz; delay locked loop; envelope restoration; envelope signal; envelope/phase generator; frequency 1.95 GHz; fully integrated envelope elimination; high-speed supply modulator; modulated RF signal; phase signals; power-added efficiency; size 90 nm; supply modulation technique; supply voltage; switching PA output; timing aligner; timing alignment technique; timing mismatch; variable high-pass filter; wide bandwidth baseband application; wide bandwidth phase signal; Bandwidth; Cutoff frequency; Delays; Frequency modulation; Switches; CMOS; LTE; efficiency; envelope elimination and restoration; power amplifier;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2014.2358554
  • Filename
    6917062