DocumentCode
1762299
Title
Sinusoidal Current Operation of Delay-Time Compensation for Parallel-Connected IGBTs
Author
Alvarez, R. ; Bernet, Steffen
Author_Institution
Power Electron. Lab., Dresden Univ. of Technol., Dresden, Germany
Volume
50
Issue
5
fYear
2014
fDate
Sept.-Oct. 2014
Firstpage
3485
Lastpage
3493
Abstract
The parallel connection of IGBTs is being applied in various low- and medium-voltage converters. The selection of the devices, the manual parametrization of gate units, and the substantial device derating are substantial disadvantages of state-of-the-art converters with parallel-connected insulated-gate bipolar transistors (IGBTs). A new, low-expensive, and automated delay-time compensation method without additional current measurements was introduced in the 2011 IEEE Energy Conversion Congress and Exposition. This paper briefly reviews the structure and function of this new scheme, shows the extension of the scheme for three parallel-connected IGBTs, and investigates the performance of the new delay-time compensation principle for sinusoidal current operation at different cos φ and ma values, as in a converter for drives.
Keywords
compensation; convertors; delays; insulated gate bipolar transistors; 2011 IEEE Energy Conversion Congress and Exposition; automated delay-time compensation method; insulated-gate bipolar transistors; low-voltage converters; medium-voltage converters; parallel-connected IGBT; sinusoidal current operation; Current measurement; Delays; Insulated gate bipolar transistors; Integrated circuits; Logic gates; Voltage measurement; High-power converters; insulated-gate bipolar transistor (IGBT); parallel connection;
fLanguage
English
Journal_Title
Industry Applications, IEEE Transactions on
Publisher
ieee
ISSN
0093-9994
Type
jour
DOI
10.1109/TIA.2014.2305905
Filename
6737235
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