• DocumentCode
    1762299
  • Title

    Sinusoidal Current Operation of Delay-Time Compensation for Parallel-Connected IGBTs

  • Author

    Alvarez, R. ; Bernet, Steffen

  • Author_Institution
    Power Electron. Lab., Dresden Univ. of Technol., Dresden, Germany
  • Volume
    50
  • Issue
    5
  • fYear
    2014
  • fDate
    Sept.-Oct. 2014
  • Firstpage
    3485
  • Lastpage
    3493
  • Abstract
    The parallel connection of IGBTs is being applied in various low- and medium-voltage converters. The selection of the devices, the manual parametrization of gate units, and the substantial device derating are substantial disadvantages of state-of-the-art converters with parallel-connected insulated-gate bipolar transistors (IGBTs). A new, low-expensive, and automated delay-time compensation method without additional current measurements was introduced in the 2011 IEEE Energy Conversion Congress and Exposition. This paper briefly reviews the structure and function of this new scheme, shows the extension of the scheme for three parallel-connected IGBTs, and investigates the performance of the new delay-time compensation principle for sinusoidal current operation at different cos φ and ma values, as in a converter for drives.
  • Keywords
    compensation; convertors; delays; insulated gate bipolar transistors; 2011 IEEE Energy Conversion Congress and Exposition; automated delay-time compensation method; insulated-gate bipolar transistors; low-voltage converters; medium-voltage converters; parallel-connected IGBT; sinusoidal current operation; Current measurement; Delays; Insulated gate bipolar transistors; Integrated circuits; Logic gates; Voltage measurement; High-power converters; insulated-gate bipolar transistor (IGBT); parallel connection;
  • fLanguage
    English
  • Journal_Title
    Industry Applications, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-9994
  • Type

    jour

  • DOI
    10.1109/TIA.2014.2305905
  • Filename
    6737235