• DocumentCode
    1762320
  • Title

    A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications

  • Author

    Pfeiffer, Ullrich R. ; Yan Zhao ; Grzyb, Janusz ; Al Hadi, Richard ; Sarmah, Neelanjan ; Forster, Wolfgang ; Rucker, Holger ; Heinemann, B.

  • Author_Institution
    Inst. for High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal, Germany
  • Volume
    49
  • Issue
    12
  • fYear
    2014
  • fDate
    Dec. 2014
  • Firstpage
    2938
  • Lastpage
    2950
  • Abstract
    This paper presents a high-power 0.53 THz source module with programmable diversity to adjust the brightness and the direction of light to obtain the desired diffuse lighting conditions in THz imaging applications. The source module consists of a single SiGe BiCMOS chip which operates an array of 16 source-pixel incoherently. Each source pixel consists of a primary on-chip ring-antenna and two triple-push oscillators locked 180° out-of-phase. The module provides a total radiated power of up to 1 mW (0 dBm) with 62.5 μW (-12 dBm) per source pixel on average and an EIRP per pixel of 25 dBm. The circuit layout is scalable in size and output power. The chip consumes up to 2.5 W from a 2.4 V supply and 3.2 mW from a digital 1.2 V supply respectively. The module includes a secondary silicon lens, is programmable through a CPLD, and supplied from a USB port. The THz radiation can be recorded with a CMOS 1 k-pixel THz video camera and represent an all silicon solution for real-time active THz imaging.
  • Keywords
    BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; submillimetre wave imaging; submillimetre wave integrated circuits; terahertz wave imaging; BiCMOS chip; CMOS terahertz video camera; SiGe; diffuse illumination; diffuse lighting conditions; frequency 0.53 THz; light brightness; light of; power 1 mW; power 2.5 W; power 3.2 mW; power 62.5 muW; programmable diversity; real-time active terahertz imaging; reconfigurable source module; terahertz imaging applications; voltage 1.2 V; voltage 2.4 V; Arrays; Harmonic analysis; Imaging; Lighting; Oscillators; Power generation; Power system harmonics; Harmonic oscillators; SiGe BiCMOS; THz; Terahertz; submillimeter wave imaging; submillimeter wave sources; triple-push oscillators;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2014.2358570
  • Filename
    6917068