Ion Implantation-Based Edge Termination to Improve III-N APD Reliability and Performance

Author

Suvarna, Puneet ; Bulmer, John ; Leathersich, Jeffrey M. ; Marini, Jonathan ; Mahaboob, Isra ; Hennessy, John ; Bell, L. Douglas ; Nikzad, Shouleh ; Shahedipour-Sandvik, F. Shadi

Author_Institution

Coll. of Nanoscale Sci. & Eng., State Univ. of New York, Albany, NY, USA

Volume

27

Issue

5

fYear

2015

fDate

March1, 1 2015

Firstpage

498

Lastpage

501

Abstract

We report on the development of ion implantationbased contact-edge termination technique to improve the reliability and performance of p-i-n and p-i-n-i-n GaN ultraviolet avalanche photodiode structures. The GaN photodiode structures were grown on sapphire substrates and implanted along the edge of the p-contact. The implanted devices show an absence of premature breakdown and demonstrate a lower dark-current with reliable ultraviolet photoresponse, compared with the standard unimplanted devices. Device simulations of the implanted structures at the breakdown voltage, show a reduction in crowding and spiking of the electric field along the perimeter of the contact by a factor of ~7, compared with the unimplanted structures.

Keywords

III-V semiconductors; avalanche photodiodes; dark conductivity; gallium compounds; ion implantation; optical fabrication; optical materials; p-i-n photodiodes; sapphire; GaN; GaN photodiode structures; III-N APD performance; III-N APD reliability; breakdown voltage; dark-current; device simulations; electric field crowding; electric field spiking; ion implantation-based contact-edge termination technique; ion implantation-based edge termination; p-contact; p-i-n GaN ultraviolet avalanche photodiode structures; p-i-n-i-n GaN ultraviolet avalanche photodiode structures; premature breakdown; reliable ultraviolet photoresponse; sapphire substrates; standard unimplanted devices; Electric breakdown; Electric fields; Gallium nitride; PIN photodiodes; Standards; Substrates; APD; GaN; avalanche; device simulation; edge termination; photodiode; premature breakdown; reliability; ultraviolet detector;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2014.2382611

Filename

6990561