InP-DHBT-on-BiCMOS Technology With $f_{T}/f_{\max }$ of 400/350 GHz for Heterogeneous Integrated Millimeter-Wave Sources

This paper presents a novel InP-SiGe BiCMOS technology using wafer-scale heterogeneous integration. The vertical stacking of the InP double heterojunction bipolar transistor (DHBT) circuitry directly on top of the BiCMOS wafer enables ultra-broadband interconnects with <; 0.2 dB insertion loss from 0-100 GHz. The 0.8 × 5 μm² InP DHBTs show fT/f_max of 400/350 GHz with an output power of more than 26 mW at 96 GHz. These are record values for a heterogeneously integrated transistor on silicon. As a circuit example, a 164-GHz signal source is presented. It features a voltage-controlled oscillator in BiCMOS, which drives a doubler-amplifier chain in InP DHBT technology.