DocumentCode
17631
Title
High-Power Ultralow Divergence Edge-Emitting Diode Laser With Circular Beam
Author
Lijie Wang ; Cunzhu Tong ; Sicong Tian ; Shili Shu ; Yugang Zeng ; Jiamin Rong ; Hao Wu ; Enbo Xing ; Yongqiang Ning ; Lijun Wang
Author_Institution
State Key Lab. of Luminescence & Applic., Changchun Inst. of Opt., Fine Mech. & Phys., Changchun, China
Volume
21
Issue
6
fYear
2015
fDate
Nov.-Dec. 2015
Firstpage
1
Lastpage
9
Abstract
A recognized drawback of edge-emitting diode lasers is their high divergence and elliptical beam shape since the first diode laser was demonstrated. In this paper, we demonstrated the ultranarrow circular beam emission from the broad area diode laser based on a modified Bragg-like waveguide. The low vertical divergence of 9.8° with 95% power content and 4.91° with the full-width at half-maximum was realized in the devices with 150 μm stripe width. The maximum output power was 4.2 W under quasi-continuous-wave operation and presently limited by thermal rollover. The detailed design principle was presented and it was found that reducing the refractive index and thickness of the defect layer was able to improve the vertical divergence and achieve the stable circular beam emission by controlling the lateral current distribution using the deep stripe. The packaged device with 90 μm stripe width demonstrated a maximum continuous wave power of 4.6 W at 10 °C. A direct fiber coupling efficiency of 90.6% had been achieved with a common fiber of 105 μm core diameter.
Keywords
laser beams; optical fibre couplers; semiconductor lasers; waveguide lasers; defect layer thickness; direct fiber coupling efficiency; high-power ultralow divergence edge-emitting diode laser; lateral current distribution; modified Bragg-like waveguide; output power; power 4.2 W; quasicontinuous-wave operation; refractive index; thermal rollover; ultranarrow circular beam emission; vertical divergence; Indexes; Laser beams; Laser modes; Optical refraction; Optical variables control; Optical waveguides; Waveguide lasers; Semiconductor lasers; high-power diode lasers; low-beam divergence; photonic bandgap;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2015.2420669
Filename
7081364
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