Silicon MEMS Disk Resonator Gyroscope With an Integrated CMOS Analog Front-End

Author

Tsanh-Hung Su ; Nitzan, Sarah H. ; Taheri-Tehrani, P. ; Kline, Mitchell H. ; Boser, Bernhard E. ; Horsley, David A.

Author_Institution

Univ. of California at Davis, Davis, CA, USA

Volume

14

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

3426

Lastpage

3432

Abstract

We present a 2-mm diameter, 35-μm-thick disk resonator gyro (DRG) fabricated in <;111> silicon with integrated 0.35-μm CMOS analog front-end circuits. The device is fabricated in the commercial InvenSense Fabrication MEMSCMOS integrated platform, which incorporates a wafer-level vacuum seal, yielding a quality factor (Q) of 2800 at the DRGs 78-kHz resonant frequency. After performing electrostatic tuning to enable mode-matched operation, this DRG achieves a 55 μV/°/s sensitivity. Resonator vibration in the sense and drive axes is sensed using capacitive transduction, and amplified using a lownoise, on-chip integrated circuit. This allows the DRG to achieve Brownian noise-limited performance. The angle random walk is measured to be 0.008°/s/√(Hz) and the bias instability is 20°/h.

Keywords

CMOS analogue integrated circuits; angular measurement; capacitance measurement; capacitive sensors; electrostatics; elemental semiconductors; gyroscopes; integrated circuit noise; microfabrication; micromechanical resonators; microsensors; seals (stoppers); silicon; vibration measurement; wafer level packaging; Brownian noise-limited performance; DRG; InvenSense fabrication MEMS-CMOS integrated platform; Si; angle random walk measurement; capacitive transduction; electrostatic tuning; frequency 78 kHz; integrated CMOS analog front-end circuit; low-noise on-chip integrated circuit; mode-matched operation; resonator vibration; silicon MEMS disk resonator gyroscope; size 0.35 mum; size 2 mm; size 35 mum; wafer-level vacuum sealing; Electrodes; Electrostatics; Gyroscopes; Micromechanical devices; Noise; Sensors; Tuning; <111> silicon; DRG; Gyroscope; disk resonator gyro; integrated CMOS;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2014.2335735

Filename

6858010