Title :
Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament
Author :
Haitao Sun ; Hangbing Lv ; Qi Liu ; Shibing Long ; Ming Wang ; Hongwei Xie ; Xiaoyu Liu ; Xiaoyi Yang ; Jiebin Niu ; Ming Liu
Author_Institution :
Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China
Abstract :
Resistive switching memory with low switching current is critical for low-power application. In this letter, we successfully demonstrated a four-terminal resistive RAM device with ultra-low switching current. The device is SET by one pair of electrodes and RESET by the other. The rupture process of conductive filament can be resulted from electrochemical reaction dominated by the lateral electric field. Therefore, during RESET process, no current flows through the filament, leading to an ultra-low switching current.
Keywords :
conducting materials; dissolving; electrochemical analysis; electrochemical electrodes; low-power electronics; random-access storage; switching circuits; RESET current process; RRAM; conducting filament; data retention; electrochemical reaction; electrode; four-terminal resistive RAM device; lateral dissolution; lateral electric held; low-power application; resistive switching memory; rupture process; ultralow switching current; Conductive filament; low power; planar structure; resistive random access memory (RRAM); side-RESET;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2261795
