DocumentCode :
1763352
Title :
A 5-Bit 1.25-GS/s 4x-Capacitive-Folding Flash ADC in 65-nm CMOS
Author :
Chi-Hang Chan ; Yan Zhu ; Sai-Weng Sin ; Seng-Pan U ; Martins, Rui P. ; Maloberti, Franco
Author_Institution :
State-Key Lab. of Analog & Mixed Signal VLSI, Univ. of Macau, Macao, China
Volume :
48
Issue :
9
fYear :
2013
fDate :
Sept. 2013
Firstpage :
2154
Lastpage :
2169
Abstract :
This paper presents a 5-bit 1.25-GS/s folding flash ADC. The prototype achieves a folding factor of four with a capacitive folding technique that only consumes dynamic power. Incorporated with various calibration schemes, folding errors and the comparator´s threshold inaccuracies are corrected, thus allowing a low input capacitance of 80 fF. The design is fabricated using 65-nm digital CMOS technology and occupies 0.007 mm 2. The maximum DNL and INL post calibration are 0.67 and 0.47 LSB, respectively. Measurement results show that the ADC can achieve 1.25 GS/s at 1-V supply with a total power consumption of 595 μW. In addition, it exhibits a mean ENOB of 4.8b at dc among ten chips, which yields an FoM of 17 fJ/conversion-step.
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; calibration; comparators (circuits); power consumption; CMOS; DNL calibration; ENOB; FoM; INL post calibration; calibration schemes; capacitance; capacitive-folding flash ADC; comparator threshold; digital CMOS technology; dynamic power; folding errors; power 595 muW; power consumption; size 65 nm; storage capacity 5 bit; Ash; Bandwidth; Calibration; Capacitance; Capacitors; Educational institutions; Power demand; Analog-to-digital conversion (ADC); Flash ADC; calibration; embedded reference; folding; low power;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2013.2264617
Filename :
6529171
Link To Document :
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