Title :
Interfaces of Zinc Phosphide Magnesium Schottky Diodes
Author :
Mushrush, Melissa ; Sharma, Mukesh ; Rozeveld, Steve ; Wright, Ryan ; Cimaroli, Alex ; Paudel, Naba ; Yanfa Yan
Author_Institution :
Dow Chem. Co., Midland, MI, USA
Abstract :
We report on the microanalysis of interfacial diffusion in zinc phosphide (Zn3P2) Schottky diodes. The Zn3P2 layers were grown by close-space sublimation on Ag-coated borosilicate glass substrates. The Schottky diodes were formed by depositing Mg layers directly on the Zn3P2 and thermally annealing the stack. Microanalysis revealed interdiffusion of Mg and Zn at the Zn3P2/Mg interface, as well as significant diffusion of Zn into the Ag back electrode layer. Such interfacial diffusion is expected to affect the electronic properties of the Zn3P2 layers and, therefore, the diode properties.
Keywords :
Schottky diodes; annealing; chemical analysis; chemical interdiffusion; electrodes; indium compounds; magnesium; semiconductor materials; sublimation; zinc compounds; Ag-B2O3-SiO2; Zn3P2-Mg-ITO; close-space sublimation; diode properties; electronic properties; interfacial diffusion; magnesium layers; microanalysis; semiconductor material; silver back electrode layer; silver-coated borosilicate glass substrates; thermal annealing; zinc phosphide magnesium Schottky diodes; Diffusion processes; Indium tin oxide; Performance evaluation; Photovoltaic cells; Schottky diodes; Zinc compounds; Close-space sublimation (CSS); Schottky diodes; diffusion; earth-abundant photovoltaics; interfaces; microanalysis; zinc phosphide;
Journal_Title :
Photovoltaics, IEEE Journal of
DOI :
10.1109/JPHOTOV.2014.2359139
