DocumentCode
1763901
Title
Selecting Single Photon Avalanche Diode (SPAD) Passive-Quenching Resistance: An Approach
Author
Savuskan, V. ; Javitt, M. ; Visokolov, G. ; Brouk, Igor ; Nemirovsky, Yael
Author_Institution
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Volume
13
Issue
6
fYear
2013
fDate
41426
Firstpage
2322
Lastpage
2328
Abstract
An approach useful for designing the passive quenching circuitry of single-photon avalanche diodes (SPADs) is presented. A method is introduced which enables a chip designer to correctly select the appropriate resistance of the passive quenching component of the chip. The range of external resistance required for adequate quenching can be determined solely from the measured dc I-V characteristics of the SPAD. The tradeoff between various allowable values of resistance is discussed.
Keywords
avalanche diodes; network synthesis; passive networks; photons; DC measurement; I-V characteristics; SPAD; passive-quenching resistance circuit design; single photon avalanche diode; Electrical resistance measurement; Junctions; Mathematical model; Resistance; Resistors; Transient analysis; Voltage measurement; CMOS SPAD; passive quenching; single photon avalanche diode (SPAD);
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2013.2253603
Filename
6482584
Link To Document