Title :
Growth process and magnetic anisotropy of amorphous LaxZnyOz nanowire arrays
Author :
Fang-Kuo Wang ; Xiao-You Yuan
Author_Institution :
Sch. of Chem. & Chem. Eng., Anhui Univ., Hefei, China
Abstract :
Amorphous LaxZnyOz nanowire arrays with average diameters of 90 nm have been fabricated by chemical co-precipitation under subatmospheric pressure suction filtration in porous anodic aluminium oxide template. The growth process of LaxZnyOz nanowire arrays was investigated through scanning electron microscopy, and the morphology, structure and components of the nanowire arrays were characterised by transmission electron microscopy, X-ray diffraction and energy dispersive X-ray spectroscopy. The room temperature hysteresis loops of LaxZnyOz nanowire arrays shows that the ratio of coercive force Hc(//)/Hc(⊥) achieved is about 13, and saturation magnetisation Ms(//)/Ms (⊥) is 1.3. The nanowire arrays possess obvious magnetic anisotropy arising from the shape anisotropy, and the easily magnetised direction is parallel to the axis of the nanowire arrays, which may determine potential applications on ultra-high-density magnetic memory material.
Keywords :
X-ray chemical analysis; X-ray diffraction; amorphous magnetic materials; coercive force; lanthanum compounds; magnetic anisotropy; magnetic hysteresis; nanofabrication; nanomagnetics; nanowires; porous materials; scanning electron microscopy; transmission electron microscopy; LaxZnyOz; X-ray diffraction; amorphous nanowire array fabrication; chemical coprecipitation; coercive force; energy dispersive X-ray spectroscopy; hysteresis loops; magnetic anisotropy; magnetisation; morphological property; nanowire array diameters; nanowire array growth process; nanowire arrays; porous anodic aluminium oxide template; potential applications; pressure 1 atm; saturation magnetisation; scanning electron microscopy; size 90 nm; structural property; subatmospheric pressure suction filtration; temperature 293 K to 298 K; transmission electron microscopy; ultra-high-density magnetic memory materials;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl.2014.0023